Sun, July 02 - Workshop starts
Registration starts
Dinner
Panel Discussion
Mon, July 03 - 1. Single crystals of silicon and III-Vs
Chairs: Maria Porrini (SunEdison Semi, Italy), Koichi Kakimoto (Kyushu Univ., Japan)
a) III-V bulk growth (GaAs, InP)
Michael Rosch (FCM, Germany)
b) Czochralski silicon and wafer processing in the PV and semiconductor device industry
Joel Kearns (NASA, USA)
Break
c) Approaches for highly n-doped silicon
Ludwig Stockmeier (Fraunhofer IISB, Germany)
d) Improvement of Si Materials and Processes for Si power devices
Shin-ichi Nishizawa (Kyushu Univ, Japan)
Lunch
Mon, July 03 - 2. Wide Bandgap Semiconductor Growth
Chairs: Dietmar Siche (IKZ Berlin, Germany), Henryk Teisseyre (Institute of Physics PAS, Poland)
a) Ga2O3 bulk crystal growth technology
Akito Kuramata (Tamura Corp. and Novel Crystal Technology, Japan)
b) Status, perspectives, and trends on bulk growth of gallium nitride
Michal Bockowski (IHPP and UniPress, Poland)
Break
c) The Development of High-Quality, UV-transparent Two-inch AlN Single-Crystal Growth
Robert Bondokov (CrystalIS, USA)
d) SiC bulk crystal growth
Thomas Straubinger (SiCrystal AG, Germany)
Dinner
Poster Session I
Tue, July 04 - 3. Oxide crystal growth I
Chairs: Hanna Dabkowska (McMaster Univ., Canada), Aleksander Gektin (ISC NAS, Ukraine)
a) Oxide crystal growth in industry
John Frank (Saint-Gobain Crystals, USA)
b) Development of high-Tc and high-performance piezo-/ferroelectric single crystals based on PZT and other systems
Zuo-Guang Ye (Simon Fraser University, Canada)
Break
c) Perovskites and other substrates for multiferroics
Christo Guguschev (IKZ, Berlin, Germany)
d) High purity raw materials for scintillators and other single crystals - development, production and control
Georgy Dosovitskiy (IREA, National research center “Kurchatov Institute”, Russia)
Lunch
Free time
Break
Tue, July 04 - 4. Emerging Fields in Crystal Growth I: Materials
Chair: Thierry Duffar (INP Grenoble, France)
a) Vacancy and Phase Control of the GeSeTe for Thermoelectric Applications
Kuei-Hsien Chen (National Taiwan University)
b) Ni and Co sulfate crystals for solar-blind UV-filters
Vera Manomenova (Shubnikov Inst. of Crystallography, Moscow, Russia)
Workshop dinner event
Wed, July 05 - 5. Multi-crystalline silicon for PV
Chairs: Christian Reimann (Fraunhofer IISB, Germany), Kader Zaidat (SIMAP Grenoble, France)
a) From upgraded metallurgical-grade silicon feedstock to high quality wafer
Anne Karin Søiland (Elkem, Norway)
b) Industrial perspective of silicon PV
Gunter Erfurt (MeyerBurger, Germany)
Break
c) Trend of Crystal Growth Technology in Solar Industry
Zhixin Li (Linton Machine, China)
d) Crucibles for HP mc-Si
Julien Laurent (Vesuvius, France)
Lunch
Wed, July 05 - 6. Emerging Fields in Crystal Growth II: Technologies
Chairs: Stephan Riepe (Fraunhofer ISE, Germany), Matthias Bickermann (IKZ Berlin, Germany)
c) Single crystal diamond wafers by heteroepitaxy
Matthias Schreck (Univ. Augsburg, Germany)
d) Technology of ammonothermal growth for gallium nitride
Siddha Pimputkar (LeHigh Univ., USA)
Break
e) Status of KRISTMAG® technology and its impact on crystal quality
Christiane Frank-Rotsch (IKZ, Berlin, Germany)
f) Silicon Crystal Doping: Pesky Problems and Exotic Options for Batch and Continuous-feed Growth
Nathan Stoddard (SolarWorld, USA)
Dinner
Poster Session II
Thu, July 06 - 7. Oxide crystal growth II
Chairs: Merry Koschan (Univ. of Tennessee, USA), Steffen Ganschow (IKZ, Germany)
e) Part 1: Single-crystal phosphors for high-brightness lighting
Part 2: Ultimate UV-IR Faraday rotators, CeF3 and (Tb1-xLux)3Sc2Al3O12
Garcia Villora (NIMS, Tsukuba, Japan)
f) Recent development and application of nonlinear optical and scintillation crystals in China
Jiyang Wang (Shandong Univ., China)
Break
DGKK poster award ceremony
g) Growth of Ti:Sa crystals for producing of large-size laser elements
Igor Pritula (ISC NAS, Ukraine)
Lunch
