Poster Session I - Mo, July 03: 19:30

  • Kaspars Dadzis, Robert Menzel, Helge Riemann, Nikolay V. Abrosimov (Leibniz Institute for Crystal Growth, Berlin, Germany)
    Thermal simulation of silicon crystal growth using a granulate crucible
  • Wataru Fukushima, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto (Research Institute for Applied Mechanics, Kyushu Univ., Fukuoka, Japan)
    Numerical analysis of dislocation density in Si single crystal using oxygen diffusion
  • Xin Liu, Xue-Feng Han, Satoshi Nakano, Koichi Kakimoto (Research Institute for Applied Mechanics, Kyushu Univ., Fukuoka, Japan)
    Control of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth
  • Xue-Feng Han, Satoshi Nakano, Xin Liu and Koichi Kakimoto (Research Institute for Applied Mechanics, Kyushu Univ., Fukuoka, Japan)
    3D Numerical analysis on the shape of free surface in floating zone (FZ) method for silicon single crystal growth
  • Agnieszka Pieniążek, Henryk Teisseyre, Dawid Jarosz, Bartłomiej S. Witkowski, Anna Reszka, Krzysztof Kopalko, Adrian Kozanecki, Marek Godlewski, Bogdan J. Kowalski (Institute of Physics, Polish Academy of Sciences, Warsaw, Poland)
    Fabrication and Optical Properties of Axial ZnO/ZnMgO Multiple Quantum Wells on Vertical ZnO Microrods
  • Dawid Jarosz, Henryk Teisseyre, Marcin Stachowicz, Jaroslaw Domagala, Adrian Kozanecki (Institute of Physics, Polish Academy of Sciences, Warsaw, Poland)
    Incorporation of magnesium into ZnMgO layers grown by PA-MBE.
  • Michal Fijalkowski, M. Iwinska, T. Sochacki, B. Lucznik, M. Amilusik, M. Bockowski (Institute of High Pressure Physics PAS, Warsaw, Poland)
    Comparison of structural, optical, and electrical properties of highly conductive HVPE-GaN doped with Si or Ge and grown on native seeds
  • Mikolaj Amilusik, Tomasz Sochacki, Malgorzata Iwinska, Boleslaw Lucznik, Michal Fijalkowski, Michal Bockowski (Institute of High Pressure Physics PAS, Warsaw, Poland)
    Highly resistive HVPE-GaN grown on native seeds with solid iron or methane as a source of dopants
  • Tom Schneider, G. Lukin, F. Zimmermann, C. Röder, M. Barchuk, E. Niederschlag, C. Schimpf, O. Pätzold, M. Stelter (Institute for Nonferrous Metallurgy and Purest Materials, TU Bergakademie Freiberg, Germany)
    Investigation of GaN layers grown by high temperature vapor phase epitaxy
  • Yudai Maji, Satoshi Nakano, Koichi Kakimoto (Research Institute for Applied Mechanics, Kyushu Univ., Fukuoka, Japan)
    Analysis of Mass Flux of AlN Crystal Growth at a Seed Face in PVT Method
  • Yeong-Jae YU, Dae-Seop BYEON, Su-Hun CHOI, Myung-Hyun LEE, Won-Jae LEE, Seong-Min JEONG (Korea Institute of Ceramic Engineering and Technology)
    Residual stress analysis on the 4H-SiC crystal grown by top seeded solution growth technique
  • Akkanur Thangavelu Ravichandran, M. Senthil Pandian (Research Department of Physics, National College, Tiruchirappalli, India)
    A Comparative Study of Solution Grown and Sankaranarayanan-Ramasamy (SR) Method Grown Diglycine Zinc Chloride (DGZC) Single Crystal
  • Alexandra Yu. Tarasova, A. A. Goloshumova, L. I. Isaenko, A. P. Yelisseyev (South Ural State University, Chelyabinsk, Russia )
    New SrPb3Br8 crystals
  • Volodimir Taranyuk, O. Gektin, A. Kolesnikov, V. Shlyakhturov (Institute for Scintillation Materials NAS of Ukraine, Kharkiv, Ukraine)
    Bulk halide single crystal growth by skull technique
  • Dmitrii Kokh, V. Shevchenko, A. Kokh, V. Vlezko, A. Vakulenko (Institute of Geology and Mineralogy SB RAS, Novosibirsk, Russia)
    Paratellurite bulk crystals growth
  • Jian Zhang, Yanru Yin, Zhitai Jia, Xutang Tao (State Key Laboratory of Crystal Materials, Shandong University, Ji’nan, China)
    Mechanism of surface cracking in a Ca12Al14O33 crystal during the cooling process
  • Lei Lin, Haijun Dong, Xiuai Lu (Photop Optics, Inc., Fuzhou, Fujian, China)
    Melt drop method in the growth of defect-free TeO2 single crystals
  • Paul Sass, Robert Schöndube (ScIDre GmbH – Scientific Instruments Dresden, Dresden, Germany)
    Optical floating zone crystal growth under high pressure atmospheres – advantages and applications
  • Anatoly M. Balbashov, M. E. Voronchikhina, M. S. Frantsishin (Moscow Power Engineering Institute, Moscow, Russia)
    Pequiliarities of single crystal growth of oxide multiferroics by floting zone melting
  • Nathan Morgan, Kerry Wang, Jeffrey J. Derby (Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA)
    Mitigation of Second-Phase Particles via Post-Growth Treatment: Temperature Gradient Zone Melting and Annealing
  • V. V. Atuchin, L. I. Isaenko, V. G. Kesler, A. Yu. Tarasova, Alexandr B. Tarasov (Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia)
    Single crystal growth and surface chemical stability
  • A. E. Kokh, Vasily A. Vlezko (Institute of Geology and Mineralogy SB RAS, Novosibirsk, Russia)
    An experience of creating the growth station control systems based on the low-cost general-purpose controllers and specialized peripherals

Poster Session II - We, July 05: 19:30

  • Ahmed Nouri, G. Chichignoud, Y. Delannoy, K. Zaidat (Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMaP, Grenoble, France)
    Achieving a square horizontal cross section of monocrystalline silicon ingots using Kyropoulos technique
  • Ingrid Schall, Erwin Peiner, Andreas Waag, Gerhard Palm, Stefan Ebbinghaus (sameday media GmbH, Schneverdingen, Germany)
    Crystalline silicon on glass by low-temperature reduction using Al
  • Jose Luis Plaza, E. Diéguez (Laboratorio de Crecimiento de Cristales, Departamento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, Spain)
    Design of a Compact Multifunctional Heat Exchange-Directional Solidification System For Industrial Multi-Crystalline Silicon Casting
  • Kader Zaidat, M. Cablea (Univ. Grenoble Alpes, SIMAP, Grenoble, France)
    Metallic impurities segregation controlled by electromagnetic field: Application to Silicon for PV
  • Tomoro Ide, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto (Department of Aeronautics and Astronautics Engineering, Kyushu Univ., Fukuoka, Japan)
    Effect of Oxygen on Dislocation Multiplication during Growth of Crystalline Silicon for Solar Cell
  • Thi Hoai Thu Nguyen, Jyh Chen Chen, Chieh Hu, Chun Hung Chen, Yen Hao Huang, Michael Yang (Department of Mechanical Engineering, National Central University, Jhongli, Taiwan)
    Numerical study of temperature, velocity, stress and dislocation-density distributions during the growth process of 800 kg and 1600 kg silicon feedstocks
  • Martin Klejch, S. Sýkorová, D. Petrýdes, M. Korjik, V. Dormenev, R. Novotny, Hans-Georg Zaunik, J. Houžžvička (CRYTUR spol. s r.o., Turnov, Czech Republic)
    Growth of radiation hard PWO crystals in open furnaces – towards reproducibility
  • Abdeldjelil Nehari, I. Lasloudji, C. Stelian, J. Boy, M. Allani, H. Cabane, M. Dumortier, P. Jeandel, K. Lebbou (Institut Lumière Matière, UMR5306 Université Lyon1-CNRS, Lyon Villeurbanne, France)
    Large LGT (La3Ga5.5Ta0.5O14) Langatate crystal growth by Czochralski technique for BAW and SAW applications
  • A. E. Dosovitskiy, Ilya Yu. Komendo, A. L. Mikhlin (National Research Center “Kurchatov institute”, IREA, Moscow, Russia)
    Development and producing of high-purity potassium dihydrogen phosphate for the large scale single crystals
  • Carmen Stelian, Thierry Duffar (SIMAP-EPM, Saint Martin d’Hères, France)
    Modeling interface shape in Czochralski growth of sapphire crystals
  • Guohao Ren, Chao Wang, Huanying Li, Jian Shi, Yuntao Wu (Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China)
    Growth of and Scintillation Properties of (Gd,Y)3(Ga,Al)5O12:Ce Crystals
  • Jan Polák, Martin Klejch, K. Bartoš, J. Houžvička (CRYTUR spol. s r.o., Turnov, Czech Republic)
    EFG method for novel garnet and perovskite materials development
  • Zhitai Jia, Jian Zhang, Qiangqiang Hu, Xutang Tao (State Key Laboratory of Crystal Materials, Shandong University, Ji’nan, China)
    Improvement of CALGO crystal: a promising host material for ultrafast laser application
  • C. L. Melcher, M. Koschan, M. Zhuravleva, F. Meng, Y. Wu, S. Donnald, M. Tyagi, J. Hayward, N. Cherepy, S. Payne (Scintillation Materials Research Center, University of Tennessee, Knoxville, TN, USA)
    Scintillation Properties of Single Crystal Garnet Scintillators
  • Haohai Yu, (State Key Laboratory of Crystal Materials, Shandong University, Ji’nan, China)
    Growth and Characterization of Zinc tungstate (ZnWO4) Raman crystal
  • Magdalena Szubka, P. Zajdel, E. Talik, A. Guzik (A. Chełkowski Institute of Physics, University of Silesia, Katowice, Poland)
    Synthesis and characterization of CaCoSinO2(n+1) ceramic pigments by X-ray diffraction, SQUID magnetometry, scanning electron microscopy and X-ray photoelectron spectroscopy
  • S. Aron Rabi, A.T. Ravichandran, C. Ravi Dhas (Research Department of Physics, Bishop Heber College, Trichy, India)
    Growth and optical, structural, mechanical, thermal and dielectric studies of Zinc Thiourea Sulphate single crystal
  • Sergey Grazhdannikov, A. Kurus, L. Isaenko, P. Krinitsyn, V. Drebuschak (Institute of Geology and Mineralogy SB RAS, Novosibirsk, Russia)
    The newest LiGaTe2 crystal thermal data and mathematical modeling of the crystal growth process
  • Tian Tian, Yumeng Li, Min Jin, Jiayue Xu (Institute of Crystal Growth, School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, China)
    A novel horizontal Bridgman growth of SnSe crystal and its thermal properties
  • Vladimir Artemyev, Andrey Smirnov, Vasif Mamedov, Alex Galyukov, Vladimir Kalaev (STR Group, Inc. and Soft-Impact, Ltd., St. Petersburg, Russia)
    Analysis of dislocation density in CZT Bridgman crystal growth using computer modeling